Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier-Reference-Cited by-同舟云学术

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Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

Published:2015-11 Issue:11 Volume:49 Page:1448-1452
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Malysheva E. I.,Dorokhin M. V.,Ved’ M. V.,Kudrin A. V.,Zdoroveishchev A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615110147.pdf

Reference13 articles.

1. M. Holub and P. Bhattacharya, J. Phys. D: Appl. Phys. 40, R179 (2007).

2. M. V. Dorokhin, E. I. Malysheva, A. V. Zdoroveishchev, Yu. A. Danilov, and A. V. Kudrin, Semiconductors 46, 1518 (2012).

3. P. Van Dorpe, Z. Liu, W. Van Roy, V. F. Motsnyi, M. Sawicki, G. Borghs, and J. de Boeck, Appl. Phys. Lett. 84, 3495 (2004).

4. E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, and D. D. Awschalom, Phys. Rev. B 65, 041306 (2002).

5. D. K. Young, J. A. Gupta, E. Johnston-Halperin, R. Epstein, Y. Kato, and D. D. Awschalom, Semicond. Sci. Technol. 17, 275 (2002).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the mechanism of spin-polarized injection in (Ga,Mn)As/n+GaAs/InGaAs Zener tunnel diode;Journal of Physics: Conference Series;2018-12

2. Raising the Operating Temperature of (Ga,Mn)As/GaAs Spin Light Emitting Diodes by Applying Post-Growth Treatment;Physics of the Solid State;2018-11

3. Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n +-GaAs/(Ga,Mn)As;Physics of the Solid State;2016-11

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