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Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components

  • Published:2008-04 Issue:4 Volume:42 Page:486-489
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Serdobintsev A. A.,Veselov A. G.,Kiryasova O. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. I. R. Zhein, V. S. Kiĭko, Yu. N. Makurin, et al., Fiz. Tverd. Tela 49, 1015 (2007) [Semiconductors 49, 1067 (2007)].

2. M. I. Daunov, R. K. Arslanov, M. M. Gadzhialiev, et al., Fiz. Tekh. Poluprovodn. 40, 1289 (2006) [Semiconductors 40, 1255 (2006)].

3. A. Kh. Abduev, A. Sh. Asvarov, A. K. Akhmedov, et al., Pis’ma Zh. Tekh. Fiz. 28(22), 59 (2002) [Tech. Phys. Lett. 28, 952 (2002)].

4. V. V. Pokropivnyĭ and M. M. Kasumov, Pis’ma Zh. Tekh. Fiz. 33(1), 88 (2007) [Tech. Phys. Lett. 33, 44 (2007)].

5. U. Helmersson, M. Lattemann, J. Bohlmark, et al., Thin Solid Films 513(1–2), 1 (2006).
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