Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures-Reference-Cited by-同舟云学术

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Published:2010-08 Issue:8 Volume:44 Page:1090-1095
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Avakyants L. P.,Bokov P. Yu.,Chervyakov A. V.,Chuyas A. V.,Yunovich A. E.,Vasileva E. D.,Bauman D. A.,Uelin V. V.,Yavich B. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610080245.pdf

Reference15 articles.

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2. N. Watanabe, T. Kimoto, and J. Suda, in Proc. of the Intern. Workshop on Nitride Semiconductors 2008 (Montreux, Switzerland, 2008), p. 487.

3. M. L. Badgutdinov and A. É. Yunovich, Fiz. Tekh. Poluprovodn. 42, 438 (2008) [Semiconductors 42, 429 (2008)].

4. T. Taekuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagava, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).

5. D. A. Zakgeim, I. P. Smirnova, I. V. Rozhanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakgeim, E. D. Vasil’eva, and G. V. Itkinson, Fiz. Tekh. Poluprovodn. 39, 885 (2005) [Semiconductors 39, 851 (2005)].

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