Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models-Reference-Cited by-同舟云学术

Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models

Published:2009-01 Issue:1 Volume:43 Page:105-111
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Klimova A. V.,Lukashin M. V.,Pashkovskii A. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609010217.pdf

Reference11 articles.

1. N. A. Banov and V. I. Ryzhyi, Mikroelektron. 15(6), 490 (1986).

2. V. A. Nikolaev, V. D. Pishchalko, V. I. Ryzhy, et al., Mikroelektron. 17(6), 504 (1988).

3. A. B. Pashkovskii, Élektron. Tekhn., Ser. Élektron. SVCh, No. 5 (399), 22 (1987).

4. K. Blotekjar, IEEE Trans. Electron. Dev. 17(1), 38 (1970).

5. V. L. Bonch-Bruevich, I. P. Zvyagin, and A. G. Mironov, Domain Electrical Instabilities in Semiconductors (Nauka, Moscow, 1972; Consultants Bureau, New York, 1975), p. 66.

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