Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the $$[2\bar 1\bar 1]$$ direction-Reference-Cited by-同舟云学术

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Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the $$[2\bar 1\bar 1]$$ direction

Published:2002-06 Issue:6 Volume:47 Page:419-421
ISSN:1028-3358
Container-title:Doklady Physics
language:en
Short-container-title:Dokl. Phys.

Author:

Galiev G. B.,Mokerov V. G.,Kul’bachinskii V. A.,Kytin V. G.,Lunin R. A.,Derkach A. V.,Vasil’evskii I. S.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy,Mechanics of Materials,Computational Mechanics

Link

http://link.springer.com/content/pdf/10.1134/1.1493376.pdf

Reference15 articles.

1. B. Etienne, F. Lelarge, Z. Z. Wang, and F. Laruelle, Appl. Surf. Sci. 113/114, 66 (1997).

2. L. Daweritz, K.-J. Friedland, J. Behrend, and P. Schutzendube, Phys. Status Solidi A 146(1), 277 (1994).

3. Y. Tokura, T. Saku, and Y. Horikoshi, Phys. Rev. B 53(16), R10528 (1996).

4. J. J. Harris, D. E. Ashenford, C. T. Foxon, et al., Appl. Phys. A 33, 87 (1984).

5. G. S. Petrich, A. M. Dabiran, J. E. Macdonald, and P. I. Cohen, J. Vac. Sci. Technol. B 9(4), 2150 (1991).

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