The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au-Reference-Cited by-同舟云学术

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The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au

Published:2017-11 Issue:5 Volume:123 Page:754-759
ISSN:0030-400X
Container-title:Optics and Spectroscopy
language:en
Short-container-title:Opt. Spectrosc.

Author:

Kukushkin V. A.,Baidus N. V.,Nekorkin S. M.,Kuritsyn D. I.,Zdoroveischev A. V.

Publisher

Pleiades Publishing Ltd

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S0030400X17110145/fulltext.html

Reference11 articles.

1. S. A. Maier, Plasmonics: Theory and Applications (Regular. Khaotich. Dinam., Izhevsk, Moscow, 2011), Chap. 2 [in Russian].

2. E. M. Purcell, Phys. Rev. 69, 681 (1946).

3. J. R. Lakowicz, Plasmonics 1, 5 (2006).

4. J. R. Lakowicz, Anal. Biochem. 337, 171 (2005).

5. C. Molinaro, Y. El. Harfouch, E. Palleau, F. Eloi, S. Marguet, L. Douillard, F. Charra, and C. Fiorini-Debuisschert, arXiv:1606.05511v2 [cond-mat.meshall] (2016).

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