Author:
Petrosyants K. O.,Popov D. A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Nayfach-Battilana, J. and Renau, J., SOI, interconnect, package, and mainboard thermal characterization, in Proceedings of the 14th ACM/IEEE International Symposium on Low Power Electronics and Design,2009, pp. 327–330.
2. Narayanan, M.R. and Nashash, H.A., Minimization of self-heating in SOI MOSFET devices with SELBOX structure, in Proceedings of the 11th International Conference on Advanced Semiconductor Devices and Microsystems,2016, pp. 61–64.
3. Cheng, J., Zhang, B., and Li, Z., The total dose radiation hardened MOSFET with good high-temperature performance, in IEEE Proceedings of International Conference of Communications, Circuits and Systems ICCCAS2007, pp. 1252–1255.
4. Trivedi, V.P. and Fossum, J.G., Nanoscale FD/SOI CMOS: thick or thin BOX?, IEEE Electron. Dev. Lett., 2005, vol. 26, no. 1, pp. 26–28.
5. El Ghouli, S., Scheer, P., Minondo, M., et al., Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model, in Proceedings of the 23rd International Conference on Mixed Design of Integrated Circuits and Systems MIXDES,2016, pp. 41–46.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献