Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range-Reference-Cited by-同舟云学术

Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range

Published:2020-11 Issue:6 Volume:49 Page:404-410
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Gnatyuk D. L.,Galiev R. R.,Zuev A. V.,Krapukhina S. L.,Maitama M. V.,Maltsev P. P.,Matveenko O. S.,Fedorov Yu. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739720050042.pdf

Reference12 articles.

1. Fedorov, Yu.V., Mal’tsev, P.P., Matveenko, O.S., Gnatyuk, D.L., et al., MMIC amplifiers with built-in antennas based on nano-heterostructures, Nanoindustriya, 2015, no. 3, pp. 44–51.

2. Fedorov, Yu.V., Bugaev, A.S., Pavlov, A.Yu., Gnatyuk, D.L., Matveenko, O.S., Pavlov, V.Yu., Slapovskii, D.N., Tomosh, K.N., Enyushkina, E.N., Galiev, R.R., Maitama, M.V., Zuev, A.V., Krapukhin, D.V., and Gamkrelidze, S.A., The manufacturing technology and development of monolithic integrated circuits based on gallium nitride, Nano- Mikrosist. Tekh., 2017, no. 5, pp. 273–293.

3. Fedorov, Yu.V. and Mikhailovich, S.V., Nitride HEMTs vs arsenides: the ultimate battle?, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2015, vol. 18, no. 1, pp. 16–22.

4. Fedorov, Yu.V. and Mikhailovich, S.V., The influence of the parameters of nanoheterostructures and manufacturing technology on the noise properties of AlGaN/GaN HEMT, Nano- Mikrosist. Tekh., 2014, no. 10, pp. 12–17.

5. Gnatyuk, D.L., Krapukhina, S.L., Lisitskii, A.P., and Mal’tsev, P.P., Overview of promising monolithic integrated circuits of gallium nitride amplifiers for the frequency range 80–100 GHz, Nano- Mikrosist. Tekh., 2020, no. 4.