Author:
Polushkin E. A.,Nefed’ev S. V.,Koval’chuk A. V.,Soltanovich O. A.,Shapoval S. Yu.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Herring, C., Johnson, N.M., and Van de Walle, C.G., Energy levels of isolated interstitial hydrogen in silicon, Phys. Rev. B, 2001, vol. 64, no. 12, pp. 1252091. https://doi.org/10.1103/PhysRevB.64.125209
2. Polushkin, E.A., Nefediev, S.V., Kovalchuk, O.A., Soltanovich, O.A., and Shapoval, S.Yu., Influence of diffusion hydrogen on the radiation hardness of silicon devices, Proc. SPIE, 2021, vol. 12157, 1215711. https://doi.org/10.1117/12.2624184
3. Goltsov, V.A., Fundamentals of hydrogen treatment of materials, Lett. Int. Sci. J. Alternative Energy Ecol., 2014, no. 2, pp. 20–21.
4. Popov, O.A., Shapoval, S.Y., and Yoder, M.D., 2.45 GHz microwave plasmas at magnetic fields below ECR, Plasma Sources Sci. Technol., 1992, vol. 1, no. 1, pp. 7–12. https://doi.org/10.1088/0963-0252/1/1/002
5. Temirbulatov, M.S. and Enns, V.I., Space program and radiation hardness of modern ICs, Elektron. Tekh. Ser. 3: Mikroelektron., 2015, no. 2, pp. 76–88.