Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect-Reference-Cited by-同舟云学术

Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect

Published:2020-03 Issue:2 Volume:49 Page:132-138
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Vasil’ev D. V.,Kostyuk D. V.,Orlov E. P.,Zhukov D. A.,Kazakov Yu. V.,Amelichev V. V.,Belyakov P. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739720010138.pdf

Reference11 articles.

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4. Shen, W., Schrag, B., Carter, M., Xie, J., Xu, C., and Sun, S., Detection of DNA labeled with magnetic nanoparticles using MgO-based magnetic tunnel junction sensors, J. Appl. Phys., 2008, vol. 103, p. 07A306.

5. Martins, V.C., Germano, J., Cardoso, F.A., Loureiro, J., Cardoso, S., and Sousa, L., Challenges and trends in the development of a magnetoresistive biochip portable platform, J. Magn. Magn. Mater., 2010, vol. 322, p. 1655.