Formation of copper-based interconnects for GaAs monolithic microwave integrated circuits-Reference-Cited by-同舟云学术

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Formation of copper-based interconnects for GaAs monolithic microwave integrated circuits

Published:2015-07 Issue:4 Volume:44 Page:248-254
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Ishutkin S. V.,Kagadey V. A.,Erofeev E. V.,Anishchenko E. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739715030038.pdf

Reference17 articles.

1. International Technology Roadmap for Semiconductors. http://www.itrs.net

2. Rosker, M.J., Greanya, V., and Tsu-Hsi, Chang, Proc. IEEE CSIC’ 08, Monterey, 2008.

3. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, Tingkai, L., Mastro, M., and Dadgar, A., Eds., New York: CRC Press, 2011.

4. Hsiao, T., Chen, G., Chou, S., and Liao, H., Proc. CS MANTECH, Boston, 2012.

5. Tsunami, D., Nishizawal, K., Oka, T., Shiga, T., Oku, T., and Takemi, M., Proc. CS MANTECH, New Orleans, 2013.

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