Photoluminescence study of single-side doped n-AlGaAs/GaAs structures with quantum wells

Author:

Yaremenko N. G.,Karachevtseva M. V.,Strakhov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Molekulyarno-luchevaya epitaksiya i geterostruktury (Molecular-Beam Epitaxy and Heterostructures) Alferov, Zh. and Shmartsev, Yu., Eds., Moscow: Mir, 1989.

2. Keisi, Kh. and Panish, M., Lazery na geterostrukturakh (Heterostructure-Based Lasers), Moscow: Mir, 1981, vol. 2.

3. Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures, New York: Halsted Press, 1988.

4. Blokhintsev, D.I., Osnovy kvantovoi mekhaniki (Quantum Mechanics Fundamentals), Moscow: Nauka, 1976.

5. Kozyrev, S.V. and Shik, A.Ya., Carrier Capture by Quantum Wells of Heterostructures, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1985, vol. 19, no. 9, pp. 1667–1670.

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