Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Author:

Verezub N. A.,Kozhitov L. V.,Kondratenko T. T.,Prostomolotov A. I.,Silaev I. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Stepanov, A.V., A new method for obtaining products (sheets, pipes, bars of various profiles) directly from the melt, Sov. Phys. Tech. Phys., 1959, vol. 4, no. 3, p. 339.

2. Stepanov, A.V. and Tsvinsky, S., Obtaining single crystals of germanium of a certain shape, Sov. Phys. Sol. State, 1965, vol. 7, p. 148.

3. Antonov, P.I., The shape and properties of crystals grown from the melt by the Stepanov method, in Rost kristallov (Growth of Crystals), Moscow: Nauka, 1980, vol. 13, pp. 171–179.

4. Nosov, Yu.G. and Nikanorov, S.I., Vyrashchivanie profilirovannykh kristallov pri kapillyarnom formoobrazovanii rasplava (Growth of Profiled Crystals during Capillary Melt Forming, Review of Foreign Articles), Leningrad: LIYaF, 1979.

5. Abrosimov, N.V., Brantov, S.K., Tatarchenko, V.A., and Lux, B., Growth of profiled silicon crystals according to the Stepanov method using various heating options, Izv. Akad. Nauk, Ser. Fiz., 1983, vol. 47, no. 2, pp. 351–355.

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