Formation of nanosized elements of microwave transistor gates by ion beam lithography-Reference-Cited by-同舟云学术

Formation of nanosized elements of microwave transistor gates by ion beam lithography

Published:2016-12 Issue:7 Volume:45 Page:451-454
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Lavrentyev K. K.,Nevolin V. K.,Rozanov R. Yu.,Tsarik K. A.,Zaitsev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739716070106.pdf

Reference9 articles.

1. Wanzenboeck, H.D. and Waid, S., Focused ion beam lithography, in Recent Advances in Nanofabrication Techniques and Applications, Cui Bo, Ed., Rijeka: InTech, 2011, pp. 27–50.

2. Fu, Y.-Q. and Bryan, N.K.A., Focused ion beam direct fabrication of microoptical elements: features compared with laser beam and electron beam direct writing, in Proc. Seminar on Innovation in Manufacturing Systems and Technology IMST, 2004, pp. 1–7.

3. Joshi-Imre, A. and Bauerdick, S., Direct-write ion beam lithography, J. Nanotechnol., 2014, vol. 2014, pp. 170415-1–170415-26.

4. Bobrinetskii, I.I., Nevolin, V.K., Tsarik, K.A., and Chudinov, A.A., A distribution of Ga+ ions in a silicon substrate for nanodimensional masking, Russ. Microelectron., 2014, vol. 43, no. 1, pp. 15–20.

5. Bruchhaus, L., Bauerdick, S., Peto, L., et al., High resolution and high density ion beam lithography employing HSQ resist, Microelectron. Eng., 2012, vol. 97, pp. 48–50.

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