Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor-Reference-Cited by-同舟云学术

Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor

Published:2023-06 Issue:3 Volume:52 Page:160-166
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Tsunvaza D.,Ryzhuk R. V.,Vasil’evskii I. S.,Kargin N. I.,Klokov V. A.

Abstract

Abstract This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT microwave-frequency range transistors with a gate length of 0.15 µm using parametric analysis methods. In the calculations, not only nonlinear current sources but also the dependences of the nonlinear gate-source and gate-drain capacitances on voltages are studied. It is shown that the proposed model makes it possible to describe the IV characteristics of the studied device adequately in the range of drain currents from 0 to 100 mA and the frequency range from 5 to 45 GHz. The error of the model does not exceed 3%.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063739723700415.pdf

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