Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices

Author:

Solov’ev A. V.,Krupkina T. U.,Lagun A. M.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Mamii, A.R. and Tlyachev, V.B., Operatsionnye usiliteli (Operational Amplifiers), Maikop: AGU, 2005.

2. Monticelli, D.M., The future of complementary bipolar, in Proceedings of the IEEE bipolar/BiCMOS circuits and technology, 2004, pp. 21–25.

3. Khokhlov, M.V., Demin, A.A, and Morozov, V.F., Development of complementary bipolar technology for the implementation of analog high-performance IMS, in “Pul’sar-2008”. Tverdotel’naya elektronika, slozhnye funktsional’nye bloki REA: materialy VII nauch.-tekhn. konf. (Proceedings of the 7th Conference on Solid State Electronics, Complex Functional Blocks of REA Pulsar-2008), Moscow, 2008, pp. 62–63.

4. Lukasevich, M.I., Method for producing complementary vertical bipolar transistors for integrated circuits, Patent PCT/RU2007/000466, 2008.

5. Wilson, M.C., Nigrin, S., Harrington, S.J., et al., in Proceedings of the IEEE 32th European Solid-State Device Research Conference, 2002, pp. 375–378.

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