The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT

Published:2020-12 Issue:8 Volume:49 Page:603-611
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Enisherlova K. L.,Temper E. M.,Kolkovsky Yu. V.,Medvedev B. K.,Kapilin S. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106373972008003X.pdf

Reference20 articles.

1. Chevtchenko, S.A., Reshchikov, M.A., Fan, Q., Ni, X., Moon, Y.T., Baski, A.A., and Morkoç, H., Study of SiNx and SiO2 passivation of GaN surfaces, J. Appl. Phys., 2007, vol. 101, no. 11, p. 2740324.https://doi.org/10.1063/1.2740324

2. Mizue, C., Hori, Y., Miczek, M., and Hashizume, T., Capacitance-voltage characteristics of Al2O3/AlGaN/ GaN structures and state density distribution at Al2O3/AlGaN Interface, Jpn. J. Appl. Phys., 2011, vol. 50, N 2R, p. 021001. https://doi.org/10.1143/JJAP.50.021001

3. Matys, M., Stoklas, R., Blaho, M., and Adamowicz, B., Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition, J. Appl. Phys., 2017, vol. 110, no. 24, p. 243505. https://doi.org/10.1063/1.4986482

4. Geng, K., Chen, D., Zhou, Q., and Wang, H., AlGaN/ GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as gate dielectric and passivation layer, Electronics, 2018, vol. 7, no. 12, p. 416. https://doi.org/10.3390/electronics7120416

5. Matys, M., Adamowicz, B., Domanowska, A., Michalewicz, A., Stoklas, R., Akazawa, M., Yatabe, Z., and Hashizume, T., On the origin of interface states at oxide/III-nitride heterojunction interfaces, J. Appl. Phys., 2016, vol. 120, no. 22, p. 225305. https://doi.org/10.1063/1.4971409

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2023-09-30

2. Influence of PECVD features of SiNx deposition processes on electrical parameters of SiNx/AlGaN/GaN structures;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-08-30

3. Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures;Modern Electronic Materials;2021-06-30

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