Integration of functional elements of resistive nonvolative memory with 1T-1R topology-Reference-Cited by-同舟云学术

Integration of functional elements of resistive nonvolative memory with 1T-1R topology

Published:2016-11 Issue:6 Volume:45 Page:383-395
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Negrov D. V.,Kirtaev R. V.,Kiseleva I. V.,Kondratyuk E. V.,Shadrin A. V.,Zenkevich A. V.,Orlov O. M.,Gornev E. S.,Krasnikov G. Ya.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739716060056.pdf

Reference23 articles.

1. International Technological Roadmap in Semiconductors, 2013 ed. http://www.itrs.net/ITRS%201999-2014%20Mtgs,%20Presentaions%20&%20Links/2013ITRS/2013Chapters/2013PIDS_Summary.pdf.

2. Waser, R. and Aono, M., Nanoionics-based resistive switching memories, Nat. Mater., 2007, vol. 6, no. 11, pp. 833–840.

3. Fujisaki, Y., Review of emerging new solid-state nonvolatile memories, Jpn. J. Appl. Phys., 2013, vol. 52, pp. 040001-1–040001-11.

4. Baek, I.-G., Kim, D.C., Lee, M.J., Kim, H.-J., Yim, E.K., Lee, M.S., Lee, J.E., Ahn, S.E., Seo, S., Lee, J.H., Park, J.C., Cha, Y.K., Park, S.O., Kim, H.S., Yoo, I.K., Chung, U.-I., Moon, J.T., and Ryu, B.I., Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application, in Proceedings of the IEEE International Electron Devices Meeting, Dec. 5–7, 2005, 2005, pp. 750–753.

5. Chen, A., Haddad, S., Wu, Y.-C., Fang, T.-N., Lan, Z., Avanzino, S., Pangrle, S., Buynoski, M., Rathor, M., Cai, W., Tripsas, N., Bill, C., van Buskirk, M., and Taguchi, M., Non-volatile resistive switching for advanced memory applications, in Proceedings of the IEEE International Electron Devices Meeting, Dec. 5–7, 2005, 2005, pp. 746–749.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance;IEEE Transactions on Electron Devices;2021-10

2. Features of the Improving of the HFO2 ReRAM Cells Characteristics Reproducibility;2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus);2019-01