Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy

Published:2012-11-17 Issue:8 Volume:41 Page:521-526
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Volykhov A. A.,Neudachina V. S.,Kharlamova M. V.,Itkis D. M.,Yashina L. V.,Belogorokhov A. I.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739712080185.pdf

Reference20 articles.

1. Liu, K.Y., Ueno, K., Fujikawa, Y., Saiki, K., and Koma, A., Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface, Jpn. J. Appl. Phys., 1993, vol. 32, p. L434.

2. Le Thanh, V., Eddrief, M., Sebenne, C., Sacuto, A., and Balkanski, M., Heteroepitaxy of GaSe Layered Semiconductor Compound on Si(111) 7 × 7 Substrate: a van der Waals Epitaxy?, J. Cryst. Growth, 1994, vol. 135, p. 1.

3. Sánchez-Royo, J.F., Segura, A., Lang, O., Schaar-Gabriel, E., Pettenkofer, C., Jaegermann, W., Roa, L., and Chevy, A., Optical and Photovoltaic Properties of InSe Thin Films Prepared by Van Der Waals Epitaxy, J. Appl. Phys., 2001, vol. 90, p. 2818.

4. Tiefenbacher, S., Sehnert, H., Pettenkofer, C., and Jaegermann, W., Epitaxial Films of WS2 by Metal Organic van der Waals Epitaxy, Surf. Sci. Lett., 1994, vol. 318, p. L1161.

5. Löher, T., Ueno, K., and Koma, A., Heteroepitaxial Growth of Lattice Mismatched Materials Using Layered Compound Buffer Layers, Appl. Surf. Sci., 1998, vol. 130–132, p. 334.

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