1. Chaplygin, Yu.A., Nanotekhnologii v elektronike (Nanotechnologies in Electronics), Moscow: Tekhnosfera, 2005.
2. Hermann, G., Grimmeiss “Silicon-Germanium—A Promise into the Future?”, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1999, vol. 33, no. 9, pp. 1032–1034.
3. Pomozov, Yu.V., Sosnin, M.G., Khirunenko, L.I., Yashnik, V.I., Abrosimov, N.V., Shreder, V., and Khene, M., Kislorodsoderzhashchie radiatsionnye defekty v Si1 − x Gex, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2000, vol. 34, no. 9, pp. 1030–1034.
4. Saidov, A.S., Kutlimuratov, A., Sapaev, B., and Davlatov, U.T., Spektral’nye i vol’tampernye kharakteristiki Si-Si 1 − x Gex geterostruktur, poluchennykh metodom zhidkofaznoi epitaksii, Pis’ma Zh. Tekh. Fiz., 2001, vol. 27, no. 8, pp. 26–35.
5. Antonova, I.V, Soots, R.A., and Prints, V.Ya., Spektr elektronnykh urovnei i zaselennost’ kvantovykh yam i kvantovykh tochek v passivirovannykh geterostrukturakh na osnove Si i Ge, Sbornik trudov VI mezhdunarodnoi konferentsii “Kremnii-2009”, 7–10 iyulya 2009, Rossiya (The spectrum of electronic levels and the population of quantum wells and quantum dots in passivated heterostructures based on Si and Ge, in Proceedings of the VI International Conference “Silicon-2009”, July 7–10, 2009, Russia), Novosibirsk.