Resistive switching in mesoscopic heterostructures based on Nd2–x Ce x CuO4–y epitaxial films-Reference-Cited by-同舟云学术

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Resistive switching in mesoscopic heterostructures based on Nd2–x Ce x CuO4–y epitaxial films

Published:2017-05 Issue:3 Volume:46 Page:180-185
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Tulina N. A.,Ivanov A. A.,Rossolenko A. N.,Shmytko I. M.,Ionov A. M.,Mozhchil’ R. N.,Borisenko I. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739717030106.pdf

Reference13 articles.

1. Meijer, G.I, Who wins the nonvolatile memory race?, Science, 2008, vol. 319, pp. 1625–1626.

2. Burr, G.W., Breitwisch, M.J., et al., Phase change memory technology, J. Vacuum Sci. Technol. B, 2010, vol. 28, pp. 223–262.

3. Bogoslovskiy, N.A. and Tsendin, K.D, Physics of switching and memory effects in chalcogenide glassy semiconductors, Semiconductors, 2012, vol. 4, no. 5, pp. 559–590.

4. Nardone, M., Simon, M., et al., Electrical conduction in chalcogenide glasses of phase change memory, J. Appl. Phys., 2012, vol. 112, pp. 071101–071120.

5. Waser, R. and Aono, M, Nanoionics-based resistive switching memories, Nat. Mater., 2007, vol. 6, pp. 833–840.

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