Author:
Gridchin V. A.,Cherkaev A. S.,Chebanov M. A.,Zinov’ev V. B.,Neizvestnyi I. G.,Kamaev G. N.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Suski, J., Mosser, V., and Goss, J., Polysilicon SOI Pressure Sensor, Sen. Actuators, 1985, vol. 17, pp. 405–414.
2. Obieta, I., Castano, E., and Cracia, F., High-Temperature Polysilicon Pressure Microsensor, Sen. Actuators A, 1995, pp. 161–165.
3. Berg, J., Gnielka, M., Caralloni, C., Boltshauer, T., Diepold, T., Mukhopadhyay, B., and Obermeier, E., A Piezoresistive Low-Pressure Sensor Fabricated Using Silicon-on-Insulator (SOI) for Harsh Environment Applications, Proc. Trancducers 01, Eurosensors XV, Munich, Germany, 2001, pp. 482–485.
4. Antonova, I.V., Naumova, O.V., Popov, V.P., Sapozhnikova, N.V., and Frantsuzov, A.A., Silicon-on-Insulator: Material and Device Structures, Mikrosist. Tekhn., 2001, no. 10, pp. 35–40.
5. Gridchin, V.A. and Lyubimskii, V.M., Physical-Technical Problems of the Development of Polysilicon Pressure Sensors, Pribory, 2005, vol. 60, no. 6, pp. 23–27.