1. Lyutsau, A.V., Krymko, M.M., Enisherlova, K.L., et al., Study of heterostructures according to single crystal X-ray diffractometry, Russ. Microelectron., 2013, vol. 42, no. 8, pp. 517–524.
2. Alekseev, A.N., Krasovitskii, D., Petrov, S., and Chalyi, V., Multilayer heterostructures AlN/AlGaN/GaN/AlGaN as the basis of new component base of solid state microwave electronics, Kompon. Tekhnol., 2008, no. 2, pp. 138–142.
3. Sharofidinov, Sh.Sh., Golovatenko, A.A., Nikitina, I.P., et al., Thick epitaxial GaN layers on silicon substrate, Mater. Phys. Mech., 2015, no. 22, pp. 53–58.
4. Kyutt, R.N., Ratnikov, V.V., Mosina, G.N., and Shcheglov, M.P., Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements, Phys. Solid State, 1999, vol. 41, no. 1, p. 25.
5. Vasil’ev, A.G., Enisherlova, K.L., Lyuttsau, A.V., et al., Investigation of AlGaN/GaN heterostructures by X-ray diffractometry method, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., 2010, no. 2 (225), pp. 13–27.