Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures-Reference-Cited by-同舟云学术

Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

Published:2011-11 Issue:6 Volume:40 Page:389-394
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Rudakov V. I.,Denisenko Yu. I.,Naumov V. V.,Simakin S. G.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739711060102.pdf

Reference11 articles.

1. Bei, Li. and Jianlin, Liu, CoSi2-Coated Si Nanocrystal Memory, J. Appl. Phys., 2009, vol. 105, p. 084905.

2. Murarka, S.P., Silicides for VLSI Applications, New York: Academic, 1983.

3. Donaton, R.A., Maex, K., Vantomme, A., Co Silicide Formation on SiGeC/Si and SiGe/Si Layers, Appl. Phys. Lett., 1997, vol. 70, p. 1266.

4. Belousov, I.V., Kuznetsov, G.V., and Pchelyakov, O.P., Planar Lateral Crystallization of the Cobalt-Silicide Phase on Silicon Surface, Fiz. Tekhn. Poluprovodn., 2006, vol. 40,issue 3, p. 909.

5. Detavernier, C., Lavoie, C., and Van Meirhaeghe, R., CoSi2 Formation in the Presence of Ti, Ta or W, Thin Solid Films, 2004, vol. 468, nos. 1–2, p. 174.

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