Modeling the Diffusion of Atoms in Multicomponent Semiconductors in a Disordered State
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Published:2024-04
Issue:2
Volume:53
Page:167-174
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Publisher
Pleiades Publishing Ltd
Reference24 articles.
1. Allen, M.P. and Tildesley, D.J., Computer Simulation of Liquids, Oxford: Oxford Univ. Press, 2017, 2nd ed. https://doi.org/10.1093/oso/9780198803195.001.0001 2. Cicek, Z., Yakut, S., Deger, D., Bozoglu, D., Mustafaeva, S., Ismailova, P., Hasanov, A.A., and Ulutas, K., Thickness dependence of dielectric properties of TlG-aS2 thin films, Mater. Sci. Semicond. Process., 2023, vol. 166, p. 107733. https://doi.org/10.1016/j.mssp.2023.107733 3. Mustafaeva S.N., Asadov M.M., Guseinova S.S., Dzha-barov A.I., and Lukichev V.F., Electronic, dielectric properties and charge transfer in a TlGaS2: Nd3+ single crystal at direct and alternating current, Phys. Solid State, 2022, vol. 64, no. 4, pp. 426–433. https://doi.org/10.21883/PSS.2022.04.53497.251 4. Mustafaeva, S.N., Asadov, M.M., Huseynova, S.S., Hasanov, N.Z., and Lukichev, V.F., Ab initio calculations of electronic properties, frequency dispersion of dielectric coefficients and the edge of the optical absorption of TlInS2:Sn single crystals, Phys. Solid State, 2022, vol. 64, no. 6, pp. 617–627. https://doi.org/10.21883/PSS.2022.06.53823.299 5. Asadov, S.M., Mustafaeva, S.N., and Lukichev, V.F., Modifying the dielectric properties of the TlGaS2 single crystal by electron irradiation, Russ. Microelectron., 2020, vol. 49, no. 4, pp. 263–268. https://doi.org/10.1134/s1063739720040022
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