Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics-Reference-Cited by-同舟云学术

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Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics

Published:2021-03 Issue:2 Volume:50 Page:118-125
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Abramov I. I.,Kolomeitseva N. V.,Labunov V. A.,Romanova I. A.,Shcherbakova I. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063739721010029.pdf

Reference44 articles.

1. Ferrari, A.C., Bonaccorso, F., Fal’ko, V., Novoselov, K.S., et al., Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, Nanoscale, 2015, vol. 7, pp. 4598–4810.

2. Ratnikov, P.V. and Silin, A.P., Two-dimensional graphene electronics: Current status and prospects, Phys. Usp., 2018, vol. 61, no. 12, pp. 1139–1174.

3. Beyond CMOS, International Roadmap for Devices and Systems, 2018.

4. Lu, N., Wang, L., Li, L., and Liu, M., A review for compact model of graphene field-effect transistors, Chin. Phys. B, 2017, vol. 26, no. 3, pp. 036804-1–18.

5. Zhuang, F., Deng, W., Ma, X., and Huang, J., A model of carrier density and drain current for monolayer graphene field-effect transistors, AIP Adv., 2019, vol. 9, pp. 025222-1–7.

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3. Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene;International Conference on Micro- and Nano-Electronics 2021;2022-01-31

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