Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange

Author:

Gonik M. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Von Ammon, W., Gelfgat, Yu., Gorbunov, L., Mühlbauer, A., Muiznieks, A., Makarov, Y., Virbulis, J., and Müller, G., Application of magnetic fields in industrial growth of silicon single crystals, in Proceedings of the 15th Riga and 6th PAMIR Conference on Fundamental and Applied MHD, Riga, 2005, pp. 41–54.

2. Nouri, A., Delannoy, Y., and Zaïdat, K., Control of multicrystalline photovoltaic silicon solidification by using a travelling magnetic field, in Proceeding of 8th International PAMIR Conference on Fundamental and Applied MHD, Borgo, Corsica, France, Sept. 5–9, 2011.

3. Tsivinskaya, Y.S. and Popov, V.N., Control of mass transfer processes in solidification of polycrystalline silicon by Bridgman technique, Izv. Tomsk. Politeh. Univ., 2012, vol. 320, no. 2, pp. 140–144.

4. Antonov, P.V. and Berdnikov, V.S., Numerical modeling of coupled heat exchange in solidification of the silicon ingots by Bridgman technique, in Trudy Mezhdunarodnoi konferenstii. Sovremennye problemy prikladnoi matematiki i mehaniki: teoria, ersperiment i praktika (Proceedings of the International Conference on Modern Problems of Applied Mathematics and Mechanics: Theory, Experiment and Practice), Novosibirsk, 2011.

5. Presnyakov, R.V., Crystal growth of multi-crystalline silicon on the basis of the high-purity metallurgical silicon, Extended Abstract of Cand. Sci. (Tech. Sci.) Dissertation, Irkutsk, 2013.

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