New trends in the development of the technology for the production of ultraviolet light-emitting diodes
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Published:2013-11-14
Issue:8
Volume:42
Page:477-482
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Kurin S. Yu.,Antipov A. A.,Barash I. S.,Bublik V. T.,Helava H.,Mokhov E. N.,Nagalyuka S. S.,Roenkov A. D.,Chemekova T. Yu.,Scherbatchev K. D.,Makarov Yu. N.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Makarov, Yu.N., Aluminum nitride substrate of two inches in diameter for optoelectronic instruments, in Trudy VIII Vseross. konf. “Nitridy galliya, indiya, i alyuminiya-struktury i pribory” (Proc. VIII All-Russia Conf. “Gallium, Indium, and Aluminum Nitrides Structures and Instruments”), St. Petersburg, 2011, pp. 59–62. 2. Polyakov, A.Ya., Smirnov, N.B., Govorkov, A.V., Belogorokhov, I.A., Scherbatchev, K.D., Bublik, V.T., Avdeev, O.A., Chemekova, T.Yu., Mokhov, E.N., Nagalyuk, S.S., Helava, H., and Makarov, Yu.N., Structural and electric properties of AlN substrates used for LED heterostructures’ growth, Russ. Microelectron., 2011, vol. 40, no. 8, pp. 629–633. 3. New semiconductor materials. Characteristics and properties. http://www.ioffe.ru/SVA/NSM/rintroduction.html . Cited July 16, 2013. 4. Chemekova, T.Yu., Avdeev, O.V., Barash, I.S., Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Makarov, Yu.N., Ramm, M.G., Davis, S., Huminic, G., and Helava, H., Sublimation growth of 2-inch diameter bulk AlN crystals, Phys. Status Solidi C, 2008. vol. 5, no. 6, pp. 1612–1614. 5. Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu., Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., and Helava, H., Experimental and theoretical analysis of sublimation growth of AlN bulk crystals, J. Cryst. Growth, 2008, vol. 310, no. 5, pp. 881–886.
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