How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup
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Published:2024-06
Issue:3
Volume:53
Page:276-289
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Publisher
Pleiades Publishing Ltd
Reference18 articles.
1. Lim, S.H. and Park, K.H., An efficient NAND flash file system for flash memory storage, IEEE Trans. Comput., 2006, vol. 55, no. 7, pp. 906–912. https://doi.org/10.1109/TC.2006.96 2. Bao, X., Yi, H., Bencher, C., Chang, L.-W., Dai, H., Chen, Yo., Chen, P., and Wong, H., SRAM, NAND, DRAM contact hole patterning using block copolymer directed self-assembly guided by small topographical templates, 2011 Int. Electron Devices Meeting, Washington, D.C., 2011, IEEE, 2011, pp. 7.7.1–7.7.4. https://doi.org/10.1109/IEDM.2011.6131510 3. Marinissen, E.J., Prince, B., Keltel-Schulz, D., and Zorian, Y., Challenges in embedded memory design and test, Design, Automation and Test in Europe, Munich, 2005, IEEE, 2005, pp. 722–727. https://doi.org/10.1109/DATE.2005.92 4. Park, S.-H., Park, J.-W., Kim, Sh.-D., and Weems, C.C., A pattern adaptive NAND flash memory storage structure, IEEE Trans. Comput., 2010, vol. 61, no. 1, pp. 134–138. https://doi.org/10.1109/TC.2010.212 5. Deebak, B.D. and Al-Turjman, F., A hybrid secure routing and monitoring mechanism in IoT-based wireless sensor networks, Ad Hoc Networks, 2020, vol. 97, p. 102022. https://doi.org/10.1016/j.adhoc.2019.102022
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