The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them-Reference-Cited by-同舟云学术

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The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them

Published:2017-12 Issue:8 Volume:46 Page:591-599
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Enisherlova K. L.,Goryachev V. G.,Saraykin V. V.,Kapilin S. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063739717080066/fulltext.html

Reference17 articles.

1. Zubkov, V.I., Characterization of InxGa1-xAs/GaAs quantum-well heterostructures by C-V measurements: band offsets, quantum-confinement levels, and wave functions, Semiconductors, 2007, vol. 41, no. 3, pp. 320–326. doi 10.1134/S1063782607030153

2. Soltanovich, O.A., Yakimov, E.B., and Shmidt, N.M., Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN lightemitting structures with multiple quantum wells, Sem/conductors, 2011, vol. 45, no. 2, pp. 221–224. doi 10.1134/S1063782611020205

3. Soltanovich, O.A. and Yakimov, E.B., Analysis of temperature dependence of capacitance-voltage characteristics of InGaN/GaN multiple quantum well lightemitting structures, Sem/conductors, 2013, vol. 47, no. 1, pp. 162–168. doi 10.1134/S1063782612120147

4. Liu, W.L., Chen, Y.L., Balandin, A.A., and Wang, K.L., Capacitance-voltage spectroscopy of trapping states in GaN/AlGaN heterostructure field-effect transistors, J. Nanoelectron. Optoelectron., 2006, vol. 1, no. 2, pp. 258–263. doi doi 10.1166/jno.2006.212

5. Antonova, I.V., Mansurov, V.G., Zhuravlev, K.S., Polyakov, V.I., and Rukavishnikov, A.I., Deep levels and electron transport in AlGaN/GaN heterostructures, Sem/conductors, 2008, vol. 42, no. 1. pp. 52–58. doi 10.1007/s11453-008-1007-z

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