1. Nikiforov, A.Y., Telets, V.A., and Chumakov, A.I., Radiatsionnye effekty v KMOP IS (Radiation Effects in CMOS ICs), Moscow: Radio i Svyaz’, 1994.
2. Kristianpoller, N., Rehavi, A., Shmilevich, A., Weiss, D., and Chen, R., Nucl. Instrum. Methods Phys. Res., Sect. B, 1998, vol. 141, pp. 343–345.
3. Vasil’eva, Z.F., Vanin, V.I., Islyaev, Sh.N., Malinin, V.G., Malyshev, M.M., and Fedosov, V.V., Influence of Radiation-Temperature Screening on the Reliability and Radiation Hardness of Solid-State Electronic Items, in Radiatsionnaya stoikost’ elektronnykh sistem (Radiation Hardness of Electronic Systems), 1999, pp. 41–42.
4. Sogoyan, A.V., Nikiforov, A.Y., and Ulesov, A.T., Experimental Estimation of the Instability of Radiation-Hardness Indicators of Finished CMOS ICs as a Result of Radiation-Thermal Treatment, in Radiatsionnaya stoikost’ elektronnykh sistem (Radiation Hardness of Electronic Systems), 1999, pp. 43–44.
5. Srour, J.B., Othmer, S., and Chen, S.C., Leakage Current Phenomena in Irradiated SOS Devices, IEEE Trans. Nucl. Sci., 1977, vol. 24, no. 6, pp. 2119–2127.