Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure-Reference-Cited by-同舟云学术

Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure

Published:2012-11-07 Issue:7 Volume:41 Page:376-378
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Chaplygin Yu. A.,Artamonova E. A.,Krasyukov A. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739712070049.pdf

Reference8 articles.

1. Voronin, P.A., Silovye poluprovodnikovye klyuchi (Power Semiconductor Switches), Moscow: Izdatel’skii dom Dodeka-XXI, 2001.

2. Su, L.T., Chung, J.E., Antoniadis, D.A., et al., Measurement and Modeling of Self-Heating in SOI NMOSFET’s, IEEE Trans. Electron Devices, 1994, vol. 41, no. 1, pp. 69–75.

3. Roig, J., Urresti, J., Cortes, I., et al., Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs, IEEE Electron Device Lett., 2004, vol. 25, no. 11, pp. 743–745.

4. Fiorenza, G., Antoniadis, A., and del Alamo, J.A., Experimental Comparison of RF Power LDMOSFETs on Thin-Film SOI and Bulk Silicon, IEEE Trans. Electron Devices, 2002, vol. 49, no. 4, pp. 687–692.

5. Khemka, V., et al., Experimental and Theoretical Analysis of Energy Capability of RESURF LDMOSFETs and Its Correlation with Static Electrical Safe Operating Area (SOA), IEEE Trans. Electron Devices, 2002, vol. 49, no 6, pp. 1049–1058.

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