A tunnel field-effect transistor with a graphene derivatives (COH) n -(CF) n -(CH) n three-layer quantum well with the middle (CF) n drain layer
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063739714060109.pdf
Reference24 articles.
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3. Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., et al., Field-effect tunneling transistor based on vertical graphene heterostructures, Science, 2012, vol. 335, no. 6071, pp. 947–950.
4. Svintsov, D.A., Vyurkov, V.V., Lukichev, V.F., and Orlikovsky, A.A., Tunnel field-effect transistors with graphene channels, Semiconductors, 2013, vol. 47, no. 2, pp. 279–284.
5. Svintsov, D., Vyurkov, V., Orlikovsky, A., Ryzhii, V., and Otsuji, T., All-graphene field-effect transistor based on lateral tunneling, J. Phys. D: Appl. Phys., 2014, vol. 47, no. 9, p. 094002.
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