Author:
Boruzdina A. B.,Gerasimov Yu. M.,Grigor’ev N. G.,Kobylyatskii A. V.,Ulanova A. V.,Shvetsov-Shilovskii I. I.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Barnaby, H., Total-ionizing-dose effects in modern CMOS technologies, IEEE Trans. Nucl. Sci., 2006, vol. 53, no. 6, pp. 3103–3121.
2. Lacoe, R.C., CMOS scaling, design principles and hardening-by-design methodologies, in Proceedings of the IEEE NSREC Short Course,
2003, sect. 2, pp. 1–142.
3. Schwank, J.R., Shaneyfelt, M.R., Fleetwood, D.M., Felix, J.A., Dodd, P.E., Paillet, P., and Ferlet-Cavrois, V., Radiation effects in MOS oxides, IEEE Trans. Nucl. Sci., 2008, vol. 55, no. 4, pp. 1833–1852.
4. Zebrev, G.I. and Gorbunov, M.S., Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern mosfets, IEEE Trans. Nucl. Sci., 2009, vol. 56, no. 4, pp. 2230–2236.
5. Barnaby, H.J., McLain, M.L., Esqueda, I.S., and Xiao, J.C., Modeling ionizing radiation effects in solid state materials and CMOS devices, IEEE Trans. Nucl. Sci., 2009, vol. 56, no. 8, pp. 1870–1883.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献