Features of the Current Flow in Injection Structures Based on PbSnTe:In Films
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Published:2018-07
Issue:4
Volume:47
Page:221-225
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Ishchenko D. V.,Neizvestnyi I. G.,Pashchin N. S.,Sherstyakova V. N.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Vul, B.M., Voronova, I.D., Kalyuzhnaya, G.A, Mamedov, T.S., and Ragimova, T.Sh., Features of transport phenomena in Pb0.78Sn0.22Te with large indium content, JETP Lett., 1979, vol. 29, no. 1, pp. 18–22. 2. Khokhlov, D.R. Ivanchik, I.I., et al., Performance and spectral response of Pb1–xSnxTe(In) far-infrared photodetectors, Appl. Phys. Lett., 2000, vol. 76, no. 20, pp. 2835–2837. 3. Akimov, A.N., Ishchenko, D.V., Klimov, A.E., Neizvestnyi, I.G., Pashchin, N.S., Sherstyakova, V.N., Shumskii, V.N., and Epov, V.S., Terahertz detectors based on Pb1–xSnxTe:In films, Optoelectron., Instrum. Data Process., 2013, vol. 49, no. 5, pp. 492–497. 4. Akimov, A.N., Erkov, V.G., Klimov, A.E., Molodtsova, E.L., Suprun, S.P., and Shumsky, V.N., Injection currents in narrow gap (Pb1–xSnxTe):In insulators, Semiconductors, 2005, vol. 39, no. 5, pp. 533–538. 5. Akimov, A.N., Ishchenko, D.V., Klimov, A.E., Neizvestnyi, I.G., Pashchin, N.S., Sherstyakova, V.N., and Shumsky, V.N., Effect of the material of injecting contacts on the CVCs of Pb1–xSnxTe:In films, Russ. Microelectron., 2013, vol. 42, no. 2, pp. 63–67.
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