1. Tyschenko, I.E., Voelskow, M., Cherkov, A.G., and Popov, V.P., Behavior of Germanium Ion-Implanted into SiO2 near the Bonding Interface of a Silicon-on-Insulator Structure, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2007, vol. 41,issue 3, pp. 301–306 [Semiconductors (Engl. Transl.), vol. 41, no. 3, pp. 291–296].
2. Volodin, V.A., Gatskevich, E.I., Dvurechenskii, A.V., Efremov, M.D., Ivlev, G.D., Nikiforov, A.I., Orekhov, D.A., and Okimov, I.D., Germanium or Silicon Nanocluster Modification by Pulsed Laser Irradiation, Fiz. Tverd. Tela (St. Petersburg), 2003, vol. 37,issue 11, pp. 1352–1357.
3. Kim, D.-W., Hwang, S., Edgar, T.F., and Banerjee, S., Characterization of SiGe Quantum Dots on SiO2 and HfO2 Grown by Rapid Thermal Chemical Deposition for Nanoelectronic Devices, J. Electrochem. Soc., 2003, vol. 150, no. 4, pp. G240–G243.
4. Yakimov, A.I., Dvurechenskii, A.V., Nikiforov, A.I., Chaikovskii, S.V., and Tiis, S.A., Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5 μm) Region, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2003, vol. 37, issue 11, pp. 1383–1388 [Semiconductors (Engl. Transl.), vol. 37, no. 11, pp. 1345–1349].
5. Malosiev, A.R., Plotnichenko, V.G., Rybaltovskii, A.O., Sokolov, V.O., and Koltashev, V.V., Germanium Nanoclusters in Germanosilicate Glass Heat-Treated in Hydrogen, Neorg. Mater., 2003, vol. 39, no. 3, pp. 374–379 [Inorg. Mater. (Engl. Transl.), vol. 39, no. 3, pp. 304–308].