1. S. M. Sze, Y. Li, and K. K. Ng, Physics of Semiconductor Devices, 4th ed. (Wiley, New Jersey, 2021).
2. V. V. Pasynkov and L. K. Chirkin, Semiconductor Devices, 9th ed. (Lan’, Moscow, 2021) [in Russian].
3. T. V. Blank and Yu. A. Gol’dberg, Semiconductors 41 (11), 1263 (2007). https://doi.org/10.1134/S1063782607110012
4. N. G. Filonov and I. V. Ivonin, Electrophysical Properties of Structures with Schottky Barrier Based on Gallium Arsenide (Tomsk State Univ., Tomsk, 2018) [in Russian].
5. M. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).