Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction-Reference-Cited by-同舟云学术

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Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

Published:2014-12 Issue:12 Volume:59 Page:1839-1843
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Dorokhin M. V.,Malysheva E. I.,Zvonkov B. N.,Zdoroveishchev A. V.,Danilov Yu. A.,Nikolichev D. E.,Boryakov A. V.,Zubkov S. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784214120056.pdf

Reference18 articles.

1. M. Holub and P. Bhattacharya, J. Phys. D: Appl. Phys. 40, R179 (2007).

2. D. K. Young, J. A. Gupta, E. Johnston-Halperin, R. Epstein, Y. Kato, and D. D. Awschalom, Semicond. Sci. Technol. 17, 275 (2002).

3. R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. B 69, 161305(R) (2004).

4. S. Hövel, N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, and K. Westerholt, Appl. Phys. Lett. 93, 021117 (2008).

5. B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, V. V. Podol’skii, E. S. Demidov, Yu. N. Drozdov, and M. V. Sapozhnikov, J. Opt. Technol. 75, 389 (2008).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature spin injection in a light-emitting diode based on a GaMnSb/n-GaAs/InGaAs tunnel junction;Journal of Physics: Conference Series;2017-03

2. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier;Semiconductors;2015-11

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