Current-voltage characteristic of a narrow-band semiconductor taking into account ionization of impurities-Reference-Cited by-同舟云学术

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Current-voltage characteristic of a narrow-band semiconductor taking into account ionization of impurities

Published:2008-09 Issue:9 Volume:53 Page:1243-1246
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Zav’yalov D. V.,Kryuchkov S. V.,Marchuk E. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784208090193.pdf

Reference21 articles.

1. A. Y. Shik, Fiz. Tekh. Poluprovodn. (Leningrad) 8, 1841 (1975) [Sov. Phys. Semicond. 8, 1195 (1975)].

2. F. G. Bass, A. A. Bulgakov, and A. P. Tetervov, High-Frequncy Properties of the Superconductors with Superlattices (Nauka Moscow, 1989) [in Russian].

3. J. Feldman, K. Leo, J. Shah, et al., Phys. Rev. B 46, 7252 (1992).

4. K. Leo, P. H. Bolivar, F. Bruggeman, et al., Solid State Commun. 84, 943 (1992).

5. F. Rossi, Semicond. Sci. Technol. 13, 147 (1998).

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