Forbidden optical transitions between impurity levels in silicon and gallium phosphide-Reference-Cited by-同舟云学术

Forbidden optical transitions between impurity levels in silicon and gallium phosphide

Published:2000-02 Issue:2 Volume:90 Page:404-406
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Pokrovskii Ya. E.,Smirnova O. I.,Khval’kovskii N. A.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/1.559118.pdf

Reference8 articles.

1. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khval’kovskii, Zh. Éksp. Teor. Fiz. 112, 221 (1997) [JETP 85, 121 (1997)].

2. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khval’kovskii, Zh. Éksp. Teor. Fiz. 114, 2204 (1998) [JETP 87, 1201 (1998)].

3. W. E. Krag, W. H. Kleiner, and H. J. Zeiger, in Abstracts of the X International Conference on the Physics of Semiconductors, Cambridge, 1970, p. 271.

4. A. K. Ramdas and S. Rodríguez, Rep. Prog. Phys. 44, 1287 (1981).

5. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khval’kovskii, Pis’ma Zh. Éksp. Teor. Fiz. 66, 224 (1997) [JETP Lett. 66, 241 (1997)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The physical principles of terahertz silicon lasers based on intracenter transitions;physica status solidi (b);2012-12-17

2. Evidence for capture of holes into resonant states in boron-doped silicon;Journal of Applied Physics;2004-11

3. Impurity pairs and excitation relaxation in doped silicon;Journal of Experimental and Theoretical Physics Letters;2004-06

4. Infrared absorption by pairs of group III and V impurities in silicon;Journal of Experimental and Theoretical Physics;2002-07