Transient processes in resonant tunneling diode with allowance for electron-electron interaction
Author:
Publisher
Pleiades Publishing Ltd
Subject
General Engineering,Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1134/S1995078013020055.pdf
Reference14 articles.
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2. L. L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett. 24(12), 593–595 (1974).
3. N. Orihashi, S. Suzuki, and M. Asada, “One THz harmonic oscillation of resonant tunneling diodes,” Appl. Phys. Lett. 87(23), 233501 (2005).
4. J. P. Van der Wagt, “Tunnelling-based sram,” Nanotechnol. 10(2), 174–186 (1999).
5. T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, F. J. Morris, T. S. Moise, E. A. Beam, and G. A. Frazier, “A monolithic 4-bit 2-gsps resonant tunneling analog-to-digital converter,” IEEE J. Solid-State Circuits 33(9), 1342–1349 (1998).
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1. Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis;Semiconductors;2016-08
2. Transient processes in a resonant tunneling diode in the presence of I-V curve hysteresis;Nanotechnologies in Russia;2015-05
3. Transient processes in two-barrier nanostructures;Journal of Experimental and Theoretical Physics;2014-06
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