Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams-Reference-Cited by-同舟云学术

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Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams

Published:2018-01 Issue:1-2 Volume:13 Page:26-33
ISSN:1995-0780
Container-title:Nanotechnologies in Russia
language:en
Short-container-title:Nanotechnol Russia

Author:

Lisitsyn S. A.,Balakirev S. V.,Avilov V. I.,Kolomiytsev A. S.,Klimin V. S.,Solodovnik M. S.,Konoplev B. G.,Ageev O. A.

Publisher

Pleiades Publishing Ltd

Subject

General Engineering,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1134/S199507801801007X.pdf

Reference32 articles.

1. V. A. Gaisler, A. V. Gaisler, A. S. Jaroshevich, I. A. Derebezov, M. M. Kachanova, Yu. A. Zhivodkov, T. A. Gavrilova, A. S. Medvedev, L. A. Nenasheva, K. V. Grachev, V. K. Sandyrev, A. S. Kozhukhov, V. M. Shayakhmetov, A. K. Kalagin, A. K. Bakarov, et al., “Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots,” Semiconductor. 49, 33 (2015).

2. M. Kianpour, R. Sabbaghi-Nadooshan, and K. Navi, “A novel design of 8-bit adder-subtractor by quantumdot cellular automata,” J. Comput. Syst. Sci. 80, 1404–1414 (2014).

3. M. J. Karimi, G. Rezaei, and M. Nazari, “Linear and nonlinear optical properties of multilayered spherical quantum dots: effects of geometrical size, hydrogenic impurity, hydrostatic pressure and temperature,” J. Lumin. 145, 55–60 (2014).

4. M. Shahazadeh and M. Saebaeian, “Wetting layerassisted modification of in-plane-polarized transitions in strain-free GaAs/AlGaAs quantum dots,” Superlatt. Microstruct. 75, 514–522 (2014).

5. E. Ramos, R. Franco, J. Silva-Valencia, and M. S. Figueira, “Thermoelectric transport properties of a T-coupled quantum dot: atomic approach for the finite U case,” Phys. E (Amsterdam, Neth.) 64, 39–44 (2014).

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