Characteristic features of the defect formation process in Pb1−x SnxSe(x⩽0.06)-Reference-Cited by-同舟云学术

Characteristic features of the defect formation process in Pb1−x SnxSe(x⩽0.06)

Published:1998-04 Issue:4 Volume:32 Page:397-400
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Veis A. N.,Suvorova N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187402.pdf

Reference23 articles.

1. L. V. Prokof’eva, M. N. Vinogradova, and S. V. Zarubo, Fiz. Tekh. Poluprovodn. 14, 2201 (1980) [Sov. Phys. Semicond. 14, 1304 (1980)].

2. L. V. Prokof’eva, E. A. Gurieva, K. G. Gartsman, Sh. M. Zhumaksanov, S. V. Zarubo, Kh. R. Mailina, and K. T. Urazbaeva, Preprint No. 1049, A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Leningrad (1986).

3. Yu. A. Degtyarev, P. P. Konstantinov, Kh. R. Mailina, and L. V. Prokof’eva, Fiz. Tekh. Poluprovodn. 23, 1576 (1989) [Sov. Phys. Semicond. 23, 977 (1989)].

4. L. V. Prokof’eva, S. V. Zarubo, F. S. Nasredinov, and P. P. Seregin, JETP Lett. 33, 12 (1981).

5. F. S. Nasredinov, L. V. Prokof’eva, and P. P. Seregin, Zh. Éksp. Teor. Fiz. 87, 951 (1984) [Sov. Phys. JETP 60, 542 (1984)].

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