On trapping of minority current carriers in n-type CdxHg1-x Te at low temperatures-Reference-Cited by-同舟云学术

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On trapping of minority current carriers in n-type CdxHg1-x Te at low temperatures

Published:1998-04 Issue:4 Volume:32 Page:389-391
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gasan-zade S. G.,Shepel’skii G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187401.pdf

Reference8 articles.

1. N. S. Baryshev, B. L. Gel’mont, and M. I. Ibragimov, Fiz. Tekh. Poluprovodn. 24, 209 (1990) [Sov. Phys. Semicond. 24, 127 (1990)].

2. I. Calas and I. Allegre, Phys. Status Solidi B 112, 179 (1982).

3. R. R. Gerhards, R. Dornhaus, and G. Nimtz, Solid-State Electron. 21, 1467 (1978).

4. N. L. Bazhenov, B. L. Gel’mont, V. I. Ivanov-Omskii, A. A. Mal’kova, V. K. Ogorodnikov, and T. U. Totieva, Fiz. Tekh. Poluprovodn. 16, 109 (1982) [Sov. Phys. Semicond. 16, 64 (1982)].

5. G. L. Bir and G. R. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, Israel Program for Scientific Translations, Jerusalem; Wiley, N. Y., 1975 [Russian original, Moscow, 1972].

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