Influence of charge flow along a semiconductor surface on the nature of the multiplication coefficient in a silicon-wide-gap layer structure-Reference-Cited by-同舟云学术

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Influence of charge flow along a semiconductor surface on the nature of the multiplication coefficient in a silicon-wide-gap layer structure

Published:1997-04 Issue:4 Volume:23 Page:324-325
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Sadygov Z. Ya.,Jejer T. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1261828.pdf

Reference8 articles.

1. A. Goetzberger and E. H. Nicollian, Appl. Phys. Lett. 9, 444 (1966).

2. A. B. Kravchenko, A. F. Plotnikov, Yu. M. Popov, and V. É. Shubin, Kvantovaya Elektron. (Moscow) 8, 785 (1981) [Sov. J. Quantum Electron. 11, 473 (1981)].

3. A. Ya. Vul’, A. T. Dideikin, A. V. Sachenko, and A. I. Shkrebtii, Pis’ma Zh. Tekh. Fiz. 14, 1729 1988 [Sov. Tech. Phys. Lett. 14, 751 (1988)].

4. A. G. Gasanov, V. M. Golovin, Z. Ya. Sadygov, and N. Yu. Yusipov, Pis’ma Zh. Tekh. Fiz. 14, 706 (1988) [Sov. Tech. Phys. Lett. 14, 313 (1988)].

5. Z. Y. Sadygov, I. M. Zheleznykh, and T. A. Kirillova, Appl. Surf. Sci. 92, 575 (1995).

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