Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers-Reference-Cited by-同舟云学术

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

Published:1999-06 Issue:6 Volume:33 Page:700-703
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aidaraliev M.,Zotova N. V.,Karandashev S. A.,Matveev B. A.,Remennyi M. A.,Stus’ N. M.,Talalakin G. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187760.pdf

Reference16 articles.

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4. W. W. Bewley, C. L. Felix, I. Vurgaftman, J. R. Meyer, C.-H. Lin, S. J. Murry, D. Zhang, S. S. Pei, and L. R. Ram-Moham, J. Appl. Phys. 83(5), 2384 (1998).

5. M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, Pis’ma Zh. Tekh. Fiz. 24(12), 40 (1998) [Tech. Phys. Lett. 24, 35 (1998)].

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