The effect of antisite defects on the band structure and dielectric function of In1−x GaxSb solid solutions
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/1.1187519.pdf
Reference8 articles.
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3. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
4. T. P. Humphreys and G. P. Srivastava, Phys. Status Solidi B 112, 581 (1982).
5. M. L. Cohen and V. Heine, Solid State Phys. 24, 37 (1970).
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1. Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film;Materials Letters;2002-10
2. Optical properties of nanocrystalline Ga1−xInxSb/SiO2 films;Materials Research Bulletin;2002-04
3. X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb–SiO2 composite films;Applied Surface Science;2000-05
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