Influence of europium doping on the sensitization of luminescence in GaAs/AlGaAs and InGaN/GaN quantum-well structures-Reference-Cited by-同舟云学术

Influence of europium doping on the sensitization of luminescence in GaAs/AlGaAs and InGaN/GaN quantum-well structures

Published:2009-02 Issue:2 Volume:51 Page:388-394
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Krivolapchuk V. V.,Mezdrogina M. M.,Kuz’min R. V.,Danilovskiĭ É. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783409020309.pdf

Reference10 articles.

1. V. V. Krivolapchuk, M. M. Mezdrogina, A. V. Nasonov, and S. N. Rodin, Fiz. Tverd. Tela (St. Petersburg) 45(9), 1556 (2003) [Phys. Solid State 45 (9), 1634 (2003)].

2. V. V. Krivolapchuk, M. M. Mezdrogina, Yu. V. Kozhanova, and S. N. Rodin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40(9), 1033 (2006) [Semiconductors 40 (9), 1007 (2006)].

3. M. M. Mezdrogina and V. V. Krivolapchuk, Fiz. Tverd. Tela (St. Petersburg) 48(7), 1182 (2006) [Phys. Solid State 48 (7), 1250 (2006)].

4. H. J. Lozykowski, Phys. Rev. B: Condens. Matter 48, 17758 (1993).

5. D. G. Thomas and J. J. Hopfield, Phys. Rev. 150, 680 (1968).

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