Charge transfer over localized states in a TlS single crystal-Reference-Cited by-同舟云学术

Charge transfer over localized states in a TlS single crystal

Published:2008-11 Issue:11 Volume:50 Page:2040-2043
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Mustafaeva S. N.,Asadov M. M.,Ismailov A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783408110073.pdf

Reference5 articles.

1. S. Kashida and K. Nakamura, J. Solid State Chem. 110, 264 (1994).

2. V. P. Aliev, Sh. G. Gasimov, T. G. Mammadov, T. S. Mammadov, A. I. Nadjafov, and MirHasan Yu. Seyidov, Fiz. Tverd. Tela (St. Petersburg) 48(12), 2194 (2006) [Phys. Solid State 48 (12), 2233 (2006)].

3. N. Mott and E. Davis, Electronic Processes in Non-Crystalline Materials (Oxford University Press, 1971; Mir, Moscow, 1974).

4. B.I. Shklovskiĭ, Fiz. Tekh. Poluprovodn. (Leningrad) 6(12), 2335 (1972) [Sov. Phys. Semicond. 6 (12), 1964 (1972)].

5. S. N. Mustafaeva, Neorg. Mater. 30, 619 (1994).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamics and Crystallization Kinetics of Solid Solutions GaSxSe1 – x (0 ≤ х ≤ 1);Russian Journal of Physical Chemistry A;2022-02

2. Simulation of Nucleation of Multiple Component 2D GaSxSe1 – x Using an Evolutionary Equation;Russian Microelectronics;2021-07

3. Ab Initio Calculations of the Electronic Properties and the Transport Phenomena in Graphene Materials;Physics of the Solid State;2020-11

4. Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 – x (0 ≤ х ≤ 1);Russian Microelectronics;2020-11

5. Modifying the Dielectric Properties of the TlGaS2 Single Crystal by Electron Irradiation;Russian Microelectronics;2020-07