Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films-Reference-Cited by-同舟云学术

Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films

Published:2010-03 Issue:3 Volume:52 Page:605-611
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Andreev V. N.,Klimov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783410030236.pdf

Reference15 articles.

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3. A. I. Gavrilyuk, T. G. Lanskaya, A. A. Mansurov, and F. A. Chudnovskiĭ, Fiz. Tverd. Tela (Leningrad) 26(1), 200 (1984) [Sov. Phys. Solid State 26 (1), 117 (1984)].

4. V. N. Andreev, V. M. Kapralova, and V. A. Klimov, Fiz. Tverd. Tela (St. Petersburg) 49(12), 2209 (2007) [Phys. Solid State 49 (12), 2318 (2007)].

5. V. N. Andreev, M. A. Gurvich, V. A. Klimov, I. A. Khakhaev, and F. A. Chudnovskiĭ, Pis’ma Zh. Tekh. Fiz. 19(10), 63 (1993) [Tech. Phys. Lett. 19 (5), 283 (1993)].

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